列印頁面
FDS9958
Dual MOSFET, P Channel, 60 V, 60 V, 2.9 A, 2.9 A, 0.082 ohm
產品訊息
製造商ONSEMI
製造商產品編號FDS9958
訂購代碼2453429RL
技術資料表
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id2.9A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.082ohm
Continuous Drain Current Id N Channel2.9A
Continuous Drain Current Id P Channel2.9A
Drain Source On State Resistance N Channel0.082ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.082ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.6V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDS9958 is a PowerTrench® dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. This device is well suited for portable electronics applications like load switching and power management, battery charging and protection circuits.
- ±20V Gate to source voltage
- -2.9A Continuous drain current
- -12A Pulsed drain current
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
2.9A
On Resistance Rds(on)
0.082ohm
Continuous Drain Current Id P Channel
2.9A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.082ohm
Gate Source Threshold Voltage Max
1.6V
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
2.9A
Drain Source On State Resistance N Channel
0.082ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000726