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FDV302P
Power MOSFET, P Channel, 25 V, 120 mA, 10 ohm, SOT-23, Surface Mount
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FDV302P
訂購代碼9846115RL
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id120mA
Drain Source On State Resistance10ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2020)
產品總覽
- Gate-source Zener for ESD ruggedness, <gt/>6kV human body mode
技術規格
Channel Type
P Channel
Continuous Drain Current Id
120mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2020)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
10ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2020)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000038