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FDV303N
Power MOSFET, N Channel, 25 V, 680 mA, 0.45 ohm, SOT-23, Surface Mount
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產品訊息
製造商ONSEMI
製造商產品編號FDV303N
訂購代碼1562545
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id680mA
Drain Source On State Resistance0.45ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max800mV
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
FDV303N 的替代選擇
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產品總覽
The FDV303N is an N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. it is an alternative to TN0200T and TN0201T transistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- 6kV human body model gate-source zener for ESD ruggedness
技術規格
Channel Type
N Channel
Continuous Drain Current Id
680mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
No. of Pins
3Pins
Product Range
-
Drain Source Voltage Vds
25V
Drain Source On State Resistance
0.45ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
Operating Temperature Max
150°C
Qualification
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.000035