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數量 | 價格 |
---|---|
1+ | NT$65.910 |
10+ | NT$40.030 |
100+ | NT$34.610 |
500+ | NT$33.220 |
1000+ | NT$31.820 |
5000+ | NT$30.420 |
價格Each
最少: 1
多項: 1
NT$65.91
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產品訊息
製造商ONSEMI
製造商產品編號FJP13009H2TU
訂購代碼1700664
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max400V
Continuous Collector Current12A
Power Dissipation100W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency4MHz
DC Current Gain hFE Min8hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
產品總覽
The FJP13009H2TU is a high voltage fast-switching NPN epitaxial planar Power Transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. Designed for high speed switching applications and offers excellent power dissipation.
- High voltage capability
- High switching speed
- 700V Collector-base voltage
- 9V Emitter-base voltage
- 6A Base current
應用
Lighting, Power Management, Motor Drive & Control
技術規格
Transistor Polarity
NPN
Continuous Collector Current
12A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
8hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
400V
Power Dissipation
100W
Transistor Mounting
Through Hole
Transition Frequency
4MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤):.00204