產品訊息
產品總覽
The FQA19N60 is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
N Channel
18.5A
TO-3P
10V
300W
150°C
-
Lead (08-Jul-2021)
600V
0.38ohm
Through Hole
5V
3Pins
-
-
法規與環境保護
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證