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FQPF19N20
Power MOSFET, N Channel, 200 V, 11.8 A, 0.15 ohm, TO-220F, Through Hole
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FQPF19N20
訂購代碼9845801
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id11.8A
Drain Source On State Resistance0.15ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
FQPF19N20 的替代選擇
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產品總覽
The FQPF19N20 is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% Avalanche tested
- 31nC Typical low gate charge
- 30pF Typical low Crss
應用
Power Management, Lighting, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
11.8A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.15ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.002