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產品訊息
製造商ONSEMI
製造商產品編號FQS4903TF
訂購代碼
複捲式9844791RL
條帶式包裝9844791
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel500V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel370mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel6.2ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (10-Jun-2022)
產品總覽
The FQS4903TF is a N-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge
- Low Crss (4.5pF)
- 100% Avalanche tested
- ±25V Gate to source voltage
- 0.37A Continuous drain current
- 0.234A Pulsed drain current
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
500V
Continuous Drain Current Id N Channel
370mA
Drain Source On State Resistance N Channel
6.2ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (10-Jun-2022)
相關產品
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (10-Jun-2022)
下載產品合規憑證
產品合規憑證
重量 (公斤):.0005

