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MJD112T4G
Darlington Transistor, NPN, 3 Pins
5,212 有存貨
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5212 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$32.180 |
| 500+ | NT$26.650 |
| 1000+ | NT$21.920 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 5
NT$3,218.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號MJD112T4G
訂購代碼2533156RL
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Continuous Collector Current2A
Power Dissipation20W
Transistor Case StyleTO-252AA
No. of Pins3Pins
Transistor MountingSurface Mount
Transition Frequency25MHz
Operating Temperature Max150°C
DC Current Gain hFE Min200hFE
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The MJD112T4G is a 2A NPN bipolar power Darlington Transistor designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
- Lead formed for surface-mount applications in plastic sleeves
- Monolithic construction with built-in base-emitter shunt resistors
- Complementary pairs simplifies designs
- Surface-mount replacements for TIP110 to TIP117 series
- AEC-Q101 qualified and PPAP capable
應用
Industrial, Power Management, Automotive, Signal Processing
技術規格
Transistor Polarity
NPN
Continuous Collector Current
2A
Transistor Case Style
TO-252AA
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
100V
Power Dissipation
20W
No. of Pins
3Pins
Transition Frequency
25MHz
DC Current Gain hFE Min
200hFE
Qualification
-
SVHC
Lead (25-Jun-2025)
MJD112T4G 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000426