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MJD117T4G
Darlington Transistor, PNP, 100 V, 20 W, 2 A, TO-252 (DPAK), 4 Pins
產品訊息
製造商ONSEMI
製造商產品編號MJD117T4G
訂購代碼2845303RL
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo100V
Collector Emitter Voltage Max100V
Continuous Collector Current2A
Power Dissipation Pd20W
Power Dissipation1.75W
DC Collector Current2A
Transistor Case StyleTO-252 (DPAK)
RF Transistor CaseTO-252 (DPAK)
No. of Pins4Pins
DC Current Gain hFE200hFE
Transistor MountingSurface Mount
Transition Frequency25MHz
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
技術規格
Transistor Polarity
PNP
Collector Emitter Voltage Max
100V
Power Dissipation Pd
20W
DC Collector Current
2A
RF Transistor Case
TO-252 (DPAK)
DC Current Gain hFE
200hFE
Transition Frequency
25MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
2A
Power Dissipation
1.75W
Transistor Case Style
TO-252 (DPAK)
No. of Pins
4Pins
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
200hFE
Product Range
-
MSL
MSL 1 - Unlimited
MJD117T4G 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000426