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| 數量 | 價格 |
|---|---|
| 100+ | NT$15.990 |
| 500+ | NT$12.470 |
| 1000+ | NT$11.000 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 5
NT$1,599.00
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產品訊息
製造商ONSEMI
製造商產品編號MJD127T4G
訂購代碼2317582RL
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage Max100V
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd20W
Continuous Collector Current8A
DC Collector Current8A
Power Dissipation20W
Transistor Case StyleTO-252 (DPAK)
RF Transistor CaseTO-252 (DPAK)
No. of Pins3Pins
DC Current Gain hFE12hFE
Transistor MountingSurface Mount
Transition Frequency4MHz
DC Current Gain hFE Min100hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The MJD127T4G is a 8A PNP bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series.
- Lead formed for surface-mount applications in plastic sleeves
- Monolithic construction with built-in base-emitter shunt resistors
- Complementary pairs simplifies designs
- AEC-Q101 qualified and PPAP capable
應用
Industrial, Power Management, Automotive
技術規格
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
8A
Power Dissipation
20W
RF Transistor Case
TO-252 (DPAK)
DC Current Gain hFE
12hFE
Transition Frequency
4MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Collector Emitter Voltage Max
100V
Power Dissipation Pd
20W
DC Collector Current
8A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
100hFE
Product Range
-
MSL
MSL 1 - Unlimited
MJD127T4G 的替代選擇
找到 2 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000473