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MJD44H11TM
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 8 A, 20 W, TO-252 (DPAK)
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不再生產
包裝選項
產品訊息
製造商ONSEMI
製造商產品編號MJD44H11TM
訂購代碼
複捲式1228219RL
條帶式包裝1228219
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Continuous Collector Current8A
Power Dissipation20W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins3Pins
DC Current Gain hFE Min60hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MJD44H11TM 的替代選擇
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產品總覽
The MJD44H11TM is a NPN Epitaxial Silicon Transistor designed for general-purpose power and switching (such as output or driver stages) applications.
- Lead formed for surface-mount application
- Low collector emitter saturation voltage
- Fast switching speeds
應用
Power Management, Industrial
技術規格
Transistor Polarity
NPN
Continuous Collector Current
8A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
80V
Power Dissipation
20W
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
60hFE
Product Range
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00033