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| 數量 | 價格 |
|---|---|
| 100+ | NT$2.000 |
| 500+ | NT$1.300 |
| 1500+ | NT$1.280 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 5
NT$200.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號MMBTA13LT1G
訂購代碼2464055RL
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo30V
Collector Emitter Voltage Max30V
Power Dissipation Pd225mW
Continuous Collector Current300mA
DC Collector Current300mA
Power Dissipation225mW
Transistor Case StyleSOT-23
RF Transistor CaseSOT-23
No. of Pins3Pins
DC Current Gain hFE10000hFE
Transition Frequency125MHz
Transistor MountingSurface Mount
Operating Temperature Max150°C
DC Current Gain hFE Min10000hFE
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
The MMBTA13LT1G is a NPN bipolar Darlington Transistor designed for use in switching applications such as print hammer, relay, solenoid and lamp drivers. The device is housed in the package which is designed for lower power surface-mount applications.
- Low RDS (ON) provides higher efficiency and extends battery life
- Saves board space
- AEC-Q101 qualified and PPAP capable
應用
Industrial, Power Management, Automotive
技術規格
Transistor Polarity
NPN
Collector Emitter Voltage Max
30V
Continuous Collector Current
300mA
Power Dissipation
225mW
RF Transistor Case
SOT-23
DC Current Gain hFE
10000hFE
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
10000hFE
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Voltage V(br)ceo
30V
Power Dissipation Pd
225mW
DC Collector Current
300mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
Transition Frequency
125MHz
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
MMBTA13LT1G 的替代選擇
找到 3 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.001