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MMUN2211LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
87,251 有存貨
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15 件可于 1-2 個工作日後配送(新加坡 件庫存)
87236 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 500+ | NT$1.050 |
| 1500+ | NT$1.030 |
價格Each (Supplied on Cut Tape)
最少: 500
多項: 1
NT$525.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號MMUN2211LT1G
訂購代碼9556648RL
技術資料表
Digital Transistor PolaritySingle NPN
Transistor PolaritySingle NPN
Collector Emitter Voltage V(br)ceo50V
Collector Emitter Voltage Max NPN50V
Continuous Collector Current Ic100mA
Collector Emitter Voltage Max PNP-
Continuous Collector Current100mA
Base Input Resistor R110kohm
Base Emitter Resistor R210kohm
Resistor Ratio, R1 / R21(Ratio)
Transistor Case StyleSOT-23
RF Transistor CaseSOT-23
No. of Pins3 Pin
Transistor MountingSurface Mount
Power Dissipation400mW
Operating Temperature Max150°C
DC Current Gain hFE Min35hFE
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The MMUN2211LT1G from On Semiconductor are NPN digital transistor in 3 pin SOT-23 (TO−236) package. Digital transistor is designed to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
- Simplifies circuit design
- Compact board space
- Reduced component count
- AEC-Q101 qualified
- Base input resistor is 10Kohm
- Base emitter resistor is 10kohm
- Collector emitter voltage VCEO of 50VDC
- Continuous collector current of 100mAdc
應用
Power Management, Consumer Electronics, Portable Devices, Industrial
技術規格
Digital Transistor Polarity
Single NPN
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Continuous Collector Current
100mA
Base Emitter Resistor R2
10kohm
Transistor Case Style
SOT-23
No. of Pins
3 Pin
Power Dissipation
400mW
DC Current Gain hFE Min
35hFE
Qualification
-
MSL
-
Transistor Polarity
Single NPN
Collector Emitter Voltage Max NPN
50V
Collector Emitter Voltage Max PNP
-
Base Input Resistor R1
10kohm
Resistor Ratio, R1 / R2
1(Ratio)
RF Transistor Case
SOT-23
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
MMUN2211LT1G 的替代選擇
找到 4 個產品
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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重量 (公斤)：.000033