NCV51561BBDWR2G

NCV51561 is a high current isolated dual channel gate driver. This is designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. This offers short and matched propagation delays. Two independent and 5kVRMS (UL1577 rating) galvanically isolated gate driver channels can be used in any possible configurations of two low side, two high-side switches or a half-bridge driver with programmable dead time. An enable pin shutdown both outputs simultaneously when is set low. The NCV51561 offers other important protection functions such as independent under-voltage lockout for both gate drivers and enable function. Typical applications are electrical vehicles, EV charging stations, high power DC/DC converters, on board chargers, traction inverters, AC and DC powered charging stations.

• 4.5A peak source, 9A peak sink output current capability, offer flexibility in design and topologies
• Propagation delay typical 36ns with 8ns maximum delay matching per channel
• Common mode transient immunity CMTI <gt/>200V/ns, AEC qualified
• Improve efficiency and allow direct drive of high power switches
• Offer proper protections for both MOSFET's and SiC FET
• Very good signal integrity and fit with fast switching speed applications
• Improved robustness in fast slew rate high voltage and high current switching applications
• Provide safety and protection in applications requiring high isolation level
• SOIC−16 WB package
• 8V UVLO