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NDS332P....
Power MOSFET, P Channel, 20 V, 1 A, 0.41 ohm, SOT-23, Surface Mount
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產品訊息
製造商ONSEMI
製造商產品編號NDS332P....
訂購代碼
複捲式9846379RL
條帶式包裝9846379
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1A
Drain Source On State Resistance0.41ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
NDS332P.... 的替代選擇
找到 6 個產品
產品總覽
The NDS332P is a P-channel logic level enhancement-mode Power FET produced using Fairchild's proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications such as battery powered circuits where fast high-side switching and low in-line power loss are needed in a very small outline surface-mount package.
- Very low level gate drive requirements allowing direct operation
- Proprietary package design using copper lead-frame for superior thermal and electrical capabilities
- High density cell design for extremely low RDS (ON)
- Exceptional ON-resistance and maximum DC current capability
應用
Power Management, Portable Devices, Computers & Computer Peripherals, Consumer Electronics
技術規格
Channel Type
P Channel
Continuous Drain Current Id
1A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.41ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
SVHC:No SVHC (15-Jan-2018)
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產品合規憑證
重量 (公斤)：.000033