列印頁面
NTD20P06LT4G
Power MOSFET, P Channel, 60 V, 15.5 A, 0.15 ohm, TO-252 (DPAK), Surface Mount
可供訂購
製造商標準交貨時間：22 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 2500+ | NT$15.150 |
| 7500+ | NT$13.630 |
價格Each (Supplied on Full Reel)
最少: 2500
多項: 2500
NT$37,875.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NTD20P06LT4G
訂購代碼2442185
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id15.5A
Drain Source On State Resistance0.15ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max1.5V
Power Dissipation65W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NTD20P06LT4G is a -60V Single P-channel Power MOSFET designed for bridge circuits, power supplies and power motor controls as well as DC-DC conversion. The MOSFET withstands high energy in avalanche and commutation modes.
- Low gate charge for fast switching
- AEC-Q101 qualified
應用
Motor Drive & Control, Power Management
技術規格
Channel Type
P Channel
Continuous Drain Current Id
15.5A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
5V
Power Dissipation
65W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.15ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000456