列印頁面
NTR4501NT1G
Power MOSFET, N Channel, 20 V, 3.2 A, 0.08 ohm, SOT-23, Surface Mount
3,000 有存貨
3,000 即日起您可預購補貨
3000 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 3000+ | NT$2.480 |
| 9000+ | NT$2.440 |
價格Each (Supplied on Full Reel)
最少: 3000
多項: 3000
NT$7,440.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NTR4501NT1G
訂購代碼2442259
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.2A
Drain Source On State Resistance0.08ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.2V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NTR4501NT1G is a 20V N-channel Power MOSFET with leading planar technology for low gate charge/fast switching. It is suitable with DC-DC conversion, load/power switch for portables and computing.
- 2.5V Rated for low voltage gate drive
- ±12V Gate to source voltage
應用
Power Management, Portable Devices, Computers & Computer Peripherals
技術規格
Channel Type
N Channel
Continuous Drain Current Id
3.2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.25W
Operating Temperature Max
150°C
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.08ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Qualification
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000045