列印頁面
NVMFD5C470NLT1G
Dual MOSFET, N Channel, 40 V, 40 V, 36 A, 36 A, 0.0115 ohm
產品訊息
製造商ONSEMI
製造商產品編號NVMFD5C470NLT1G
訂購代碼2835604RL
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id36A
Continuous Drain Current Id N Channel36A
On Resistance Rds(on)0.0092ohm
Continuous Drain Current Id P Channel36A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0115ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Transistor Case StyleDFN
No. of Pins8Pins
Power Dissipation Pd24W
Power Dissipation N Channel24W
Power Dissipation P Channel24W
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
SVHCLead (27-Jun-2024)
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
36A
Continuous Drain Current Id P Channel
36A
Drain Source On State Resistance N Channel
0.0115ohm
Rds(on) Test Voltage
10V
Transistor Case Style
DFN
Power Dissipation Pd
24W
Power Dissipation P Channel
24W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
40V
Continuous Drain Current Id
36A
On Resistance Rds(on)
0.0092ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Power Dissipation N Channel
24W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000012