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NVMFD5C478NT1G
Dual MOSFET, N Channel, 40 V, 40 V, 27 A, 27 A, 0.017 ohm
產品訊息
製造商ONSEMI
製造商產品編號NVMFD5C478NT1G
訂購代碼2895745RL
技術資料表
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Continuous Drain Current Id27A
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel27A
On Resistance Rds(on)0.014ohm
Continuous Drain Current Id P Channel27A
Drain Source On State Resistance N Channel0.017ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Transistor Case StyleDFN
No. of Pins8Pins
Power Dissipation Pd23W
Power Dissipation N Channel23W
Power Dissipation P Channel23W
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
SVHCLead (25-Jun-2025)
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
40V
Continuous Drain Current Id
27A
Continuous Drain Current Id N Channel
27A
Continuous Drain Current Id P Channel
27A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
DFN
Power Dissipation Pd
23W
Power Dissipation P Channel
23W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (25-Jun-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds P Channel
40V
On Resistance Rds(on)
0.014ohm
Drain Source On State Resistance N Channel
0.017ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
3.5V
No. of Pins
8Pins
Power Dissipation N Channel
23W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0001