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SBAS16HT1G
Small Signal Diode, Single, 100 V, 200 mA, 1.25 V, 6 ns, 36 A
可供訂購
製造商標準交貨時間：14 週
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| 數量 | 價格 |
|---|---|
| 100+ | NT$1.590 |
| 500+ | NT$1.100 |
| 1000+ | NT$0.821 |
| 5000+ | NT$0.805 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 5
NT$159.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號SBAS16HT1G
訂購代碼2723933RL
技術資料表
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage100V
Average Forward Current200mA
Forward Voltage Max1.25V
Reverse Recovery Time6ns
Forward Surge Current36A
Operating Temperature Max150°C
Diode Case StyleSOD-323
No. of Pins2Pins
Diode MountingSurface Mount
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
SBAS16HT1G is a switching diode. It is AEC-Q101 qualified and PPAP capable.
- Continuous reverse voltage is 100V
- Peak forward current is 200mA
- Repetitive peak forward current is 1A
- Reverse voltage leakage current is 1µAdc maximum at (VR = 100Vdc, TA = 25°C)
- Reverse breakdown voltage is 100VDC minimum at (TA = 25°C)
- Forward voltage is 715mW maximum at (TA = 25°C)
- Diode capacitance is 2pF maximum at (VR = 0, f = 1MHz)
- Forward recovery voltage is 1.75VDC maximum at (IF = 10mAdc, tr = 20ns)
- Reverse recovery time is 6ns maximum at (IF = IR = 10mAdc, RL = 50 ohm)
- Junction temperature range from -55°C to 150°C, SOD-323 package
技術規格
Diode Configuration
Single
Average Forward Current
200mA
Reverse Recovery Time
6ns
Operating Temperature Max
150°C
No. of Pins
2Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Repetitive Peak Reverse Voltage
100V
Forward Voltage Max
1.25V
Forward Surge Current
36A
Diode Case Style
SOD-323
Diode Mounting
Surface Mount
Qualification
AEC-Q101
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000833