列印頁面
SBC846BDW1T1G
Bipolar Transistor Array, Dual NPN, 65 V, 100 mA, 380 mW
14,655 有存貨
需要更多？
14655 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 500+ | NT$2.240 |
| 1500+ | NT$2.200 |
價格Each (Supplied on Cut Tape)
最少: 500
多項: 5
NT$1,120.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號SBC846BDW1T1G
訂購代碼2628004RL
技術資料表
Transistor PolarityDual NPN
Collector Emitter Voltage V(br)ceo65V
Collector Emitter Voltage Max NPN65V
DC Collector Current100mA
Collector Emitter Voltage Max PNP-
Power Dissipation Pd380mW
Continuous Collector Current NPN100mA
DC Current Gain hFE200hFE
Continuous Collector Current PNP-
Power Dissipation NPN380mW
Power Dissipation PNP-
DC Current Gain hFE Min NPN200hFE
DC Current Gain hFE Min PNP-
Transistor Case StyleSOT-363
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN100MHz
Transition Frequency PNP-
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
技術規格
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max NPN
65V
Collector Emitter Voltage Max PNP
-
Continuous Collector Current NPN
100mA
Continuous Collector Current PNP
-
Power Dissipation PNP
-
DC Current Gain hFE Min PNP
-
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
-
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
65V
DC Collector Current
100mA
Power Dissipation Pd
380mW
DC Current Gain hFE
200hFE
Power Dissipation NPN
380mW
DC Current Gain hFE Min NPN
200hFE
Transistor Case Style
SOT-363
Transistor Mounting
Surface Mount
Transition Frequency NPN
100MHz
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
相關產品
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00001