UHB100SC12E1BC3N

UHB100SC12E1BC3N is a Silicon Carbide (SiC) cascode JFET module. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si super junction devices. Available in the E1B module package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive. Advanced Ag sintering die attach technology gives the module superior thermal performance.

• On-resistance RDS(on): 9.4mohm (typ)
• Operating temperature of 150°C (max)
• Excellent reverse recovery Qrr of 1000nC
• 1.4V low body diode voltage VFSD
• Low gate charge QG of 170nC
• Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive
• Low intrinsic capacitance
• ESD protected: HBM class 2 and CDM class C3