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TP70H300G4JSGB-TR
Gallium Nitride (GaN) Transistor, 700 V, 8 A, 0.312 ohm, 5.4 nC, QFN, Surface Mount
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產品訊息
製造商RENESAS
製造商產品編號TP70H300G4JSGB-TR
訂購代碼4680957RL
Product RangeSuperGaN Series
技術資料表
Drain Source Voltage Vds700V
Continuous Drain Current Id8A
Drain Source On State Resistance0.312ohm
Typical Gate Charge5.4nC
Transistor Case StyleQFN
Transistor MountingSurface Mount
No. of Pins8Pins
Product RangeSuperGaN Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
TP70H300G4JSGB-TR is a 700V, 300mohm SuperGaN® Gallium Nitride (GaN) FET. It is a normally-off device using Renesas’ Gen IV platform. It combines a state-of-the art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Applications include consumer, power adapters, low power SMPS and lighting.
- Dynamic RDS(on)eff production tested
- Transient over-voltage capability and E-mode gate driver operation without zener protection
- Very low QRR
- Reduced crossover loss
- 2kV HBM ESD rating
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly used gate drivers
技術規格
Drain Source Voltage Vds
700V
Drain Source On State Resistance
0.312ohm
Transistor Case Style
QFN
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
8A
Typical Gate Charge
5.4nC
Transistor Mounting
Surface Mount
Product Range
SuperGaN Series
SVHC
No SVHC (25-Jun-2025)
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001