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2SK3018T106
Power MOSFET, N Channel, 30 V, 100 mA, 8 ohm, SOT-323, Surface Mount
產品訊息
製造商ROHM
製造商產品編號2SK3018T106
訂購代碼1680169
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id100mA
Drain Source On State Resistance8ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage4V
Gate Source Threshold Voltage Max1.5V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
產品總覽
The 2SK3018T106 is a N-channel silicon MOSFET offers 30V drain source voltage and ±100mA continuous drain current. It is suitable for use in interfacing, switching applications.
- Low ON-resistance
- Fast switching speed
- 2.5V Low voltage drive makes this device ideal for portable equipment
- Drive circuits can be simple
- Parallel use is easy
應用
Power Management, Portable Devices, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
100mA
Transistor Case Style
SOT-323
Rds(on) Test Voltage
4V
Power Dissipation
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
8ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
2SK3018T106 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (23-Jan-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00003