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BD2311NVX-LBE2
Gate Driver, 1 Channels, GaN HEMT, 6 Pins, SSON-EP
725 有存貨
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725 件可于 3-4 個工作日後配送(英國 件庫存)
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| 數量 | 價格 |
|---|---|
| 1+ | NT$133.010 |
| 10+ | NT$101.370 |
| 25+ | NT$93.770 |
| 50+ | NT$89.360 |
| 100+ | NT$84.940 |
| 250+ | NT$82.300 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$133.01
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ROHM
製造商產品編號BD2311NVX-LBE2
訂購代碼4294091
技術資料表
No. of Channels1Channels
Gate Driver Type-
Driver Configuration-
Power Switch TypeGaN HEMT
No. of Pins6Pins
IC Case / PackageSSON-EP
IC MountingSurface Mount
Input TypeInverting, Non-Inverting
Source Current7A
Sink Current5A
Supply Voltage Min4.5V
Supply Voltage Max5.5V
Operating Temperature Min-40°C
Operating Temperature Max125°C
Input Delay3.4ns
Output Delay3ns
Product Range-
Qualification-
SVHCTo Be Advised
產品總覽
BD2311NVX-LBE2 is a single-channel ultra-fast gate driver. It is a single gate driver capable of driving GaN HEMTs at Ultra-Fast with narrow pulses, which can contribute to the long-range and high accuracy of LiDAR. As a protection function, the driver includes an Undervoltage lockout (UVLO) between VCC and GND. Application includes industrial equipment, industrial LiDAR, DC / DC converters, industrial detection sensors, and augmented reality.
- Gate driver voltage range from 4.5V to 5.5V
- 7A / 5A typical output current IOH / IOL
- Minimum input pulse width is 1.25ns (0 ohm series 220pF load, Tj = -40 to +125°C)
- 7A typical peak source current (Tj = -40 to +125°C)
- Turn-on propagation delay time is 3.4ms typical (100pF load, Tj = -40 to +125°C)
- Turn-off propagation delay time is 3ms typical (100pF load, Tj = -40 to +125°C)
- VCC operating current is 38.7mA (30MHz (50% duty), 2ohm as ROUTH and ROUTL, 100pF load)
- SSON06RX2020 package, operating temperature range from -40°C to +125°C
技術規格
No. of Channels
1Channels
Driver Configuration
-
No. of Pins
6Pins
IC Mounting
Surface Mount
Source Current
7A
Supply Voltage Min
4.5V
Operating Temperature Min
-40°C
Input Delay
3.4ns
Product Range
-
SVHC
To Be Advised
Gate Driver Type
-
Power Switch Type
GaN HEMT
IC Case / Package
SSON-EP
Input Type
Inverting, Non-Inverting
Sink Current
5A
Supply Voltage Max
5.5V
Operating Temperature Max
125°C
Output Delay
3ns
Qualification
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85423190
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:To Be Advised
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000007