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| 數量 | 價格 |
|---|---|
| 1+ | NT$923.750 |
價格Each
最少: 1
多項: 1
NT$923.75
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產品訊息
製造商ROHM
製造商產品編號BM3G007MUV-EVK-003
訂購代碼4240700
技術資料表
Silicon ManufacturerRohm Semiconductor
Silicon Core NumberBM3G007MUV-LBE2
Kit Application TypePower Management
Application Sub TypeGaN HEMT Power Stage
Kit ContentsEvaluation Board BM3G007MUV-LBE2
Product Range-
SVHCNo SVHC (25-Jun-2025)
產品總覽
BM3G007MUV-EVK-003 is a 650V GaN HEMT power stage BM3G007MUV evaluation board. The BM3G007MUV-EVK-003 evaluation board consists of the BM3G007MUV (GaN FET (650V 70mohm), integrated driver and protection circuit) and A board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
- Power supply voltage range from 6.25V to 35V
- Drain voltage max is 650V
- VDD quiescent current is 0.24mA (max)
- Positive-going input threshold of 2V and negative-going input threshold of 1.55V max
- Output current range 2 is 20V/ns
- Operating temperature range from -10 to +65°C
技術規格
Silicon Manufacturer
Rohm Semiconductor
Kit Application Type
Power Management
Kit Contents
Evaluation Board BM3G007MUV-LBE2
SVHC
No SVHC (25-Jun-2025)
Silicon Core Number
BM3G007MUV-LBE2
Application Sub Type
GaN HEMT Power Stage
Product Range
-
技術文件 (1)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Japan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Japan
承擔產品生產最後程序之國家
關稅編號:84733020
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000001