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BSM120D12P2C005
Silicon Carbide Bipolar (BJT) Single Transistor, N Channel, 120 A, 1.2 kV, 2.7 V
可供訂購
製造商標準交貨時間：34 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$12,093.400 |
| 5+ | NT$11,879.800 |
價格Each
最少: 1
多項: 1
NT$12,093.40
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ROHM
製造商產品編號BSM120D12P2C005
訂購代碼2345472
技術資料表
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id120A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins10Pins
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max2.7V
Power Dissipation780W
Operating Temperature Max150°C
Product Range-
SVHCLead (23-Jan-2024)
產品總覽
The BSM120D12P2C005 is a N-channel SiC Power Module designed for use with inverter, converter, photovoltaic, wind power generation and induction heating equipment applications. The device offers low surge, low switching loss and high-speed switching possible, reduced temperature dependence.
應用
Industrial, Motor Drive & Control, Alternative Energy, Power Management, Medical
技術規格
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
120A
Drain Source On State Resistance
-
No. of Pins
10Pins
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
150°C
SVHC
Lead (23-Jan-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
-
Power Dissipation
780W
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
關稅編號：85359000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (23-Jan-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.279413