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| 數量 | 價格 |
|---|---|
| 1+ | NT$18,452.630 |
| 5+ | NT$16,146.050 |
價格Each
最少: 1
多項: 1
NT$18,452.63
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僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ROHM
製造商產品編號BSM180C12P3C202
訂購代碼3573219
技術資料表
MOSFET Module ConfigurationChopper
Channel TypeN Channel
Continuous Drain Current Id180A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max5.6V
Power Dissipation880W
Operating Temperature Max150°C
Product Range-
SVHCLead (23-Jan-2024)
產品總覽
BSM180C12P3C202 is a SiC power module. This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Application includes motor drive, converter, photovoltaics, wind power generation.
- Low surge, low switching loss, high-speed switching possible
- Reduced temperature dependence
- 1.8V typical static drain-source on-state voltage (Tj=25°C, IC=180A, VGS=18V)
- 10µA maximum drain cut-off current (VDS=1200V, VGS=0V, Tj=25°C)
- Gate-source threshold voltage range from 2.7V to 5.6V (VDS=10V, ID=50mA, Tj=25°C)
- 9nF typical input capacitance (VDS=10V, VGS=0V, 100KHz, Tj=25°C)
- 30ns typ switching characteristics (VGS(on)=18V, VGS(off)=0V, VDS=600V, RG=3.9ohm inductive load)
- 2500Vrms isolation voltage (terminals to baseplate, f=60Hz AC 1min)
- 1.4ohm typical gate resistance (Tj=25°C)
- Junction temperature range from -40°C to150°C
技術規格
MOSFET Module Configuration
Chopper
Continuous Drain Current Id
180A
Drain Source On State Resistance
-
No. of Pins
-
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
150°C
SVHC
Lead (23-Jan-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
-
Power Dissipation
880W
Product Range
-
技術文件 (1)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Japan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Japan
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (23-Jan-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤):.28