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BSM300D12P3E005
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 300 A, 1.2 kV, Module
6 有存貨
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6 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$45,438.900 |
價格Each
最少: 1
多項: 1
NT$45,438.90
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產品訊息
製造商ROHM
製造商產品編號BSM300D12P3E005
訂購代碼3573226
技術資料表
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id300A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max5.6V
Power Dissipation1.26kW
Operating Temperature Max150°C
Product Range-
SVHCLead (23-Jan-2024)
產品總覽
BSM300D12P3E005 is a SiC power module. This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Application includes motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
- Low surge, low switching loss, high-speed switching possible
- Reduced temperature dependence
- 1.7V on-state static (typ, Tj=25°C, ID=300A, VGS=18V)
- 2.5V drain-source voltage (typ, Tj=125°C, ID=300A, VGS=18V)
- 2mA drain cut-off current (max, VDS=1200V, VGS=0V, Tj=25°C)
- 2.0V source-drain voltage (typ, VGS=0V,IS=300A, Tj=25°C)
- 14nF input capacitance (typ, VDS=10V, VGS=0V, 200KHz, Tj=25°C)
- 2500Vrms isolation voltage (terminals to baseplate f = 60Hz AC 1 min, Tj = 25°C)
- Junction temperature range from -40 to 150°C
技術規格
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
300A
Drain Source On State Resistance
-
No. of Pins
-
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
150°C
SVHC
Lead (23-Jan-2024)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
-
Power Dissipation
1.26kW
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (23-Jan-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.28