列印頁面
EM6K6T2R
Dual MOSFET, N Channel, 20 V, 20 V, 300 mA, 300 mA, 0.7 ohm
產品訊息
製造商ROHM
製造商產品編號EM6K6T2R
訂購代碼2706589RL
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id300mA
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.7ohm
Continuous Drain Current Id N Channel300mA
Continuous Drain Current Id P Channel300mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.7ohm
Rds(on) Test Voltage4V
Drain Source On State Resistance P Channel0.7ohm
Transistor Case StyleSOT-563
Gate Source Threshold Voltage Max1V
No. of Pins6Pins
Power Dissipation Pd150mW
Power Dissipation N Channel150mW
Power Dissipation P Channel150mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
300mA
On Resistance Rds(on)
0.7ohm
Continuous Drain Current Id P Channel
300mA
Drain Source On State Resistance N Channel
0.7ohm
Drain Source On State Resistance P Channel
0.7ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
150mW
Power Dissipation P Channel
150mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
300mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4V
Transistor Case Style
SOT-563
No. of Pins
6Pins
Power Dissipation N Channel
150mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000003