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HP8JB5TB1
Dual MOSFET, Dual P Channel, 40 V, 18 A
100 有存貨
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100 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$59.480 |
| 10+ | NT$38.160 |
| 100+ | NT$25.540 |
| 500+ | NT$20.290 |
| 1000+ | NT$19.000 |
| 5000+ | NT$18.620 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$59.48
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ROHM
製造商產品編號HP8JB5TB1
訂購代碼4758538
技術資料表
Channel TypeDual P Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel18A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.044ohm
Transistor Case StyleHSOP
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel21W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
Dual P Channel
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
18A
Drain Source On State Resistance P Channel
0.044ohm
No. of Pins
8Pins
Power Dissipation P Channel
21W
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
HSOP
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0001