列印頁面
SH8KE6TB1
Dual MOSFET, N Channel, 100 V, 100 V, 4.5 A, 4.5 A, 0.058 ohm
產品訊息
製造商ROHM
製造商產品編號SH8KE6TB1
訂購代碼4064775RL
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds100V
Continuous Drain Current Id4.5A
Drain Source Voltage Vds P Channel100V
On Resistance Rds(on)0.045ohm
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.058ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Transistor Case StyleSOP
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id
4.5A
On Resistance Rds(on)
0.045ohm
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance N Channel
0.058ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOP
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id N Channel
4.5A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00005