列印頁面
SH8MC4TB1
Dual MOSFET, N and P Channel, 60 V, 60 V, 3.5 A, 4 A, 0.095 ohm
90 有存貨
需要更多？
90 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$51.670 |
| 10+ | NT$32.700 |
| 100+ | NT$21.820 |
| 500+ | NT$17.890 |
| 1000+ | NT$14.370 |
| 5000+ | NT$14.230 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$51.67
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ROHM
製造商產品編號SH8MC4TB1
訂購代碼4410735
技術資料表
Channel TypeN and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel3.5A
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel0.095ohm
Drain Source On State Resistance P Channel0.096ohm
Transistor Case StyleSOP
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
技術規格
Channel Type
N and P Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance P Channel
0.096ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
SVHC
To Be Advised
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
3.5A
Drain Source On State Resistance N Channel
0.095ohm
Transistor Case Style
SOP
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Japan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:To Be Advised
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00001