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SP8M4FU6TB
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 7 A, 7 A, 0.012 ohm
產品訊息
製造商ROHM
製造商產品編號SP8M4FU6TB
訂購代碼1525587RL
技術資料表
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id7A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel7A
On Resistance Rds(on)0.012ohm
Continuous Drain Current Id P Channel7A
Drain Source On State Resistance N Channel0.012ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.012ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOP
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (15-Jan-2018)
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
7A
Continuous Drain Current Id N Channel
7A
Continuous Drain Current Id P Channel
7A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (15-Jan-2018)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.012ohm
Drain Source On State Resistance N Channel
0.012ohm
Drain Source On State Resistance P Channel
0.012ohm
Transistor Case Style
SOP
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
SVHC:No SVHC (15-Jan-2018)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000084