列印頁面
US6J11TR
Dual MOSFET, P Channel, 12 V, 12 V, 1.3 A, 1.3 A
產品訊息
製造商ROHM
製造商產品編號US6J11TR
訂購代碼2706718RL
技術資料表
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds N Channel12V
Drain Source Voltage Vds12V
Continuous Drain Current Id1.3A
Drain Source Voltage Vds P Channel12V
On Resistance Rds(on)0.19ohm
Continuous Drain Current Id N Channel1.3A
Continuous Drain Current Id P Channel1.3A
Drain Source On State Resistance N Channel-
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.26ohm
Transistor Case StyleTUMT
Gate Source Threshold Voltage Max1V
Power Dissipation Pd1W
No. of Pins6Pins
Power Dissipation N Channel1W
Power Dissipation P Channel1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
技術規格
Transistor Polarity
P Channel
Drain Source Voltage Vds N Channel
12V
Continuous Drain Current Id
1.3A
On Resistance Rds(on)
0.19ohm
Continuous Drain Current Id P Channel
1.3A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.26ohm
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Power Dissipation P Channel
1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
P Channel
Drain Source Voltage Vds
12V
Drain Source Voltage Vds P Channel
12V
Continuous Drain Current Id N Channel
1.3A
Drain Source On State Resistance N Channel
-
Rds(on) Test Voltage
4.5V
Transistor Case Style
TUMT
Power Dissipation Pd
1W
Power Dissipation N Channel
1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000005