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SKM100GB125DN
IGBT Module, Half Bridge, 100 A, 3.3 V, 150 °C, Module
2 有存貨
16 即日起您可預購補貨
2 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$6,501.150 |
| 5+ | NT$6,131.500 |
| 10+ | NT$5,811.690 |
價格Each
最少: 1
多項: 1
NT$6,501.15
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商SEMIKRON
製造商產品編號SKM100GB125DN
訂購代碼2423681
技術資料表
IGBT ConfigurationHalf Bridge
Continuous Collector Current100A
Collector Emitter Saturation Voltage3.3V
Power Dissipation-
Operating Temperature Max150°C
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Ultrafast]
Transistor MountingPanel
Product Range-
產品總覽
The SKM100GB125DN is a 1200V N-channel Ultra Fast IGBT Module with fast and soft inverse CAL diodes. This transistor is ideal for resonant inverters up to 100kHz and Electronic welders as well inductive heating.
- Low inductance
- Short tail current with low temperature dependence
- High short circuit capability
- Isolated copper baseplate using DCB (Direct Copper Bonding) technology
- Large clearance (10mm) and creepage distances (20mm)
應用
Power Management, Industrial
警告
ESD sensitive device, take proper precaution while handling the device. Due to technical requirements, component may contain dangerous substances.
技術規格
IGBT Configuration
Half Bridge
Collector Emitter Saturation Voltage
3.3V
Operating Temperature Max
150°C
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
Continuous Collector Current
100A
Power Dissipation
-
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Ultrafast]
Product Range
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Italy
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Italy
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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產品合規憑證
重量 (公斤)：.18