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2N3500
Bipolar (BJT) Single Transistor, NPN, 150 V, 300 mA, 5 W, TO-39, Through Hole
无库存
產品訊息
製造商SOLID STATE
製造商產品編號2N3500
訂購代碼1862982
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max150V
Continuous Collector Current300mA
Power Dissipation5W
Transistor Case StyleTO-39
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency150MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
產品總覽
The 2N3500 is a 150V NPN silicon planar RF Transistor capable of 5W power dissipation and 300mA continuous collector current.
- 150V Collector to base voltage
- 6V Emitter to base voltage
- 35°C/W Thermal resistance, junction to case
應用
RF Communications
技術規格
Transistor Polarity
NPN
Continuous Collector Current
300mA
Transistor Case Style
TO-39
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
150V
Power Dissipation
5W
Transistor Mounting
Through Hole
Transition Frequency
150MHz
Operating Temperature Max
200°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.001044