列印頁面
GD100HFY120C1S
IGBT Module, Half Bridge, 155 A, 2 V, 511 W, 150 °C, Module
可供訂購
製造商標準交貨時間：24 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$1,546.690 |
| 5+ | NT$1,446.560 |
| 10+ | NT$1,342.160 |
| 50+ | NT$1,268.560 |
| 100+ | NT$1,244.010 |
價格Each
最少: 1
多項: 1
NT$1,546.69
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商STARPOWER
製造商產品編號GD100HFY120C1S
訂購代碼2986060
技術資料表
IGBT ConfigurationHalf Bridge
Continuous Collector Current155A
Collector Emitter Saturation Voltage2V
Power Dissipation511W
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyTrench Field Stop
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
產品總覽
Starpower IGBT Modules and Arrays provide ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. With key features of Trench IGBT technology, maximum junction temperature 175°C and an Isolated copper baseplate using DBC technology.
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
IGBT Configuration
Half Bridge
Collector Emitter Saturation Voltage
2V
Operating Temperature Max
150°C
IGBT Termination
Stud
IGBT Technology
Trench Field Stop
Product Range
-
Continuous Collector Current
155A
Power Dissipation
511W
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:To Be Advised
下載產品合規憑證
產品合規憑證
重量 (公斤)：.156399