列印頁面
2N3055...
Bipolar (BJT) Single Transistor, NPN, 60 V, 15 A, 115 W, TO-3, Through Hole
不再生產
產品訊息
製造商產品編號2N3055...
訂購代碼9801308
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Continuous Collector Current15A
Power Dissipation115W
Transistor Case StyleTO-3
Transistor MountingThrough Hole
No. of Pins2Pins
Transition Frequency3MHz
DC Current Gain hFE Min70hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2015)
2N3055... 的替代選擇
找到 3 個產品
產品總覽
The 2N3055 from STMicroelectronics is a through hole complementary power transistor in TO-3 package. This device manufactured in planar technology with “base island” layout and suitable for power linear and switching applications.
- Collector to emitter voltage (Vce) is 70V at 100 ohm RBE
- Collector current (Ic) is 15A
- Power dissipation (Pd) is 115W
- Collector to emitter saturation voltage of 3V at 10A collector current
- DC current gain (hFE) of 5 at 10A collector current
- Operating junction temperature range from 200°C
應用
Power Management, Consumer Electronics, Portable Devices, Industrial
技術規格
Transistor Polarity
NPN
Continuous Collector Current
15A
Transistor Case Style
TO-3
No. of Pins
2Pins
DC Current Gain hFE Min
70hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
60V
Power Dissipation
115W
Transistor Mounting
Through Hole
Transition Frequency
3MHz
Operating Temperature Max
200°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
SVHC:No SVHC (17-Dec-2015)
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產品合規憑證
重量 (公斤)：.0115