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| 數量 | 價格 |
|---|---|
| 1+ | NT$33.040 |
| 10+ | NT$15.270 |
| 100+ | NT$13.540 |
| 500+ | NT$10.430 |
| 1000+ | NT$8.570 |
| 5000+ | NT$7.680 |
價格Each
最少: 1
多項: 1
NT$33.04
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號BDX34C
訂購代碼1015774
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd70W
DC Collector Current10A
RF Transistor CaseTO-220
No. of Pins3Pins
DC Current Gain hFE750hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- Complementary to the BDX33C
- Well-controlled hFE parameter for increased reliability
應用
Industrial
技術規格
Transistor Polarity
PNP
Power Dissipation Pd
70W
RF Transistor Case
TO-220
DC Current Gain hFE
750hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
10A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (25-Jun-2025)
BDX34C 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.002