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BUL216
Bipolar (BJT) Single Transistor, NPN, 800 V, 4 A, 90 W, TO-220, Through Hole
7,703 有存貨
2,450 即日起您可預購補貨
7703 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$95.930 |
| 10+ | NT$47.800 |
| 100+ | NT$43.030 |
| 500+ | NT$35.060 |
| 1000+ | NT$29.900 |
| 5000+ | NT$29.290 |
價格Each
最少: 1
多項: 1
NT$95.93
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號BUL216
訂購代碼9935193
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max800V
Continuous Collector Current4A
Power Dissipation90W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BUL216 is a 800V High Voltage Fast Switching NPN Power Transistor manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a hollow emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- High voltage capability
- Very high switching speed
- High operating junction temperature
- High ruggedness
- Well-controlled hFE parameter for increased reliability
應用
Lighting, Power Management
技術規格
Transistor Polarity
NPN
Continuous Collector Current
4A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
800V
Power Dissipation
90W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.002041