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SCT30N120
Silicon Carbide MOSFET, Single, N Channel, 40 A, 1.2 kV, 0.08 ohm, HiP247
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| 數量 | 價格 |
|---|---|
| 1+ | NT$650.690 |
| 5+ | NT$628.080 |
| 10+ | NT$605.470 |
| 50+ | NT$582.850 |
| 100+ | NT$560.240 |
| 250+ | NT$537.620 |
價格Each
最少: 1
多項: 1
NT$650.69
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號SCT30N120
訂購代碼2451116
技術資料表
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id40A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
Transistor Case StyleHiP247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.6V
Power Dissipation270W
Operating Temperature Max200°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The SCT30N120 is a N-channel silicon carbide Power MOSFET, unsurpassed on-resistance per unit area and very good switching performance independent of temperature. Suitable for high efficiency and high power density applications.
- Very tight variation of on-resistance vs. temperature
- Slight variation of switching losses vs. temperature
- Very high operating temperature capability (200°C)
- Very fast and robust intrinsic body diode
- Low capacitance
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
MOSFET Module Configuration
Single
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.6V
Operating Temperature Max
200°C
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
HiP247
Rds(on) Test Voltage
20V
Power Dissipation
270W
Product Range
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.008051