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產品訊息
製造商產品編號SCTL90N65G2V
訂購代碼3748721
技術資料表
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id40A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.018ohm
Transistor Case StylePowerFLAT
No. of Pins5Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3.2V
Power Dissipation935W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
產品總覽
SCTL90N65G2V is a silicon carbide power MOSFET. This silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Typical applications are switching mode power supply, DC-DC converters, and industrial motor control.
- Very fast and robust intrinsic body diode, low capacitances
- Source sensing pin for increased efficiency
- Drain-source breakdown voltage is 650V minimum at VGS = 0V, ID = 1mA
- Static drain-source on-resistance is 24mohm max at VGS = 18V, ID = 40A
- Drain current (continuous) at TC = 25°C is 40A
- Input capacitance is 3380pF typical at VDS = 400V, f = 1MHz, VGS = 0V
- Rise time is 38ns typ at VDD = 400V, ID = 50A, RG = 2.2ohm, VGS = -5V to 18V
- PowerFLAT 8x8 HV package
- Operating junction temperature range from -55 to 175°C
技術規格
MOSFET Module Configuration
Single
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.018ohm
No. of Pins
5Pins
Gate Source Threshold Voltage Max
3.2V
Operating Temperature Max
175°C
MSL
MSL 3 - 168 hours
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
PowerFLAT
Rds(on) Test Voltage
18V
Power Dissipation
935W
Product Range
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.00018