列印頁面
331 有存貨
需要更多?
331 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$1,294.610 |
| 5+ | NT$1,165.150 |
| 10+ | NT$1,096.110 |
| 50+ | NT$1,018.430 |
| 100+ | NT$949.380 |
價格Each
最少: 1
多項: 1
NT$1,294.61
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號SCTW100N65G2AG
訂購代碼3387273
技術資料表
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id100A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3.1V
Power Dissipation420W
Operating Temperature Max200°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
產品總覽
SCTW100N65G2AG is an automotive-grade silicon carbide power MOSFET. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- 650V drain-source voltage
- 100A drain current (continuous) at TC = 25°C
- 420W total power dissipation at TC = 25°C
- HiP247 package
- Operating junction temperature range from -55 to 200°C
技術規格
MOSFET Module Configuration
Single
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.02ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
3.1V
Operating Temperature Max
200°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
420W
Product Range
-
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000091