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STB10NK60ZT4
Power MOSFET, N Channel, 600 V, 4.5 A, 0.65 ohm, TO-263 (D2PAK), Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$167.830 |
| 10+ | NT$86.990 |
| 100+ | NT$79.230 |
| 500+ | NT$69.850 |
| 1000+ | NT$65.650 |
| 5000+ | NT$64.340 |
價格Each
最少: 1
多項: 1
NT$167.83
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STB10NK60ZT4复制
製造商標準前置時間28 週
訂購代碼1751968
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id4.5A
Drain Source On State Resistance0.65ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation115W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STB10NK60ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
- Extremely high dV/dt capability
- 100% Avalanche tested
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
4.5A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
115W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.65ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002722