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STB18NM80
Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm, TO-263 (D2PAK), Surface Mount
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230 件可于 1-2 個工作日後配送(新加坡 件庫存)
1488 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$175.600 |
| 10+ | NT$121.640 |
| 100+ | NT$87.310 |
| 500+ | NT$85.020 |
| 1000+ | NT$78.630 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$175.60
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產品訊息
製造商產品編號STB18NM80
訂購代碼2098126
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id17A
Drain Source On State Resistance0.25ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STB18NM80 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offers extremely low ON-resistance, high dV/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
- 100% Avalanche tested
- Low gate input resistance
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
17A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
0.25ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
STB18NM80 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001724