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STB30N65M2AG
Power MOSFET, N Channel, 650 V, 20 A, 0.15 ohm, TO-263 (D2PAK), Surface Mount
產品訊息
製造商產品編號STB30N65M2AG
訂購代碼4036284RL
Product RangeMDmesh M2 Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id20A
Drain Source On State Resistance0.15ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh M2 Series
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.15ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
MDmesh M2 Series
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00138