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STB42N65M5
Power MOSFET, N Channel, 650 V, 33 A, 0.07 ohm, TO-263 (D2PAK), Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$295.270 |
| 5+ | NT$274.840 |
| 10+ | NT$254.400 |
| 50+ | NT$248.150 |
| 100+ | NT$241.890 |
| 250+ | NT$235.630 |
價格Each
最少: 1
多項: 1
NT$295.27
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STB42N65M5
訂購代碼2098141
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id33A
Drain Source On State Resistance0.07ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STB42N65M5 is a MDmesh™ N-channel Power MOSFET offers excellent switching performance. The MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics' well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon-based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiencies.
- TO-220 worldwide best RDS (ON)
- Higher VDSS rating
- High dV/dt capability
- Easy to drive
- 100% Avalanche tested
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
33A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.07ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001715