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STB55NF06LT4
Power MOSFET, N Channel, 30 V, 55 A, 0.018 ohm, TO-263 (D2PAK), Surface Mount
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| 數量 | 價格 |
|---|---|
| 50+ | NT$30.360 |
| 200+ | NT$28.040 |
| 500+ | NT$25.720 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$3,036.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號STB55NF06LT4
訂購代碼1752002RL
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id55A
Drain Source On State Resistance0.018ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage16V
Gate Source Threshold Voltage Max1.7V
Power Dissipation95W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STB55NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Exceptional dV/dt capability
- 100% Avalanche tested
- Application oriented characterization
- -55 to 175°C Operating junction temperature
應用
Power Management, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
55A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
16V
Power Dissipation
95W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.018ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001685