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STB55NF06T4
Power MOSFET, N Channel, 60 V, 27.5 A, 0.015 ohm, TO-263 (D2PAK), Surface Mount
產品訊息
製造商產品編號STB55NF06T4
訂購代碼1752003
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id27.5A
Drain Source On State Resistance0.015ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The STB55NF06T4 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. The device is suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications and applications with low gate charge driving requirements.
- 100% Avalanche tested
- Exceptional dV/dt capability
- -55 to 175°C Operating junction temperature range
應用
Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
27.5A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.015ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00192